Infineon Technologies AG and SolarEdge Technologies Inc have extended their collaboration to develop solid-state circuit breaker (SSCB) technology for high-voltage DC power distribution in AI and hyperscale data centres.
The collaboration focuses on 800V DC architectures, where increasing AI compute density is driving demand for higher-voltage power distribution systems. The companies said rapid fault isolation is critical to maintaining safety, reliability and efficiency in these systems.
Extended Partnership
Under the extended partnership, SolarEdge will lead the design of the SSCB solution, while Infineon will provide its silicon carbide (SiC) JFET technology for the protection devices.
Unlike conventional AC systems, DC networks do not have a natural current-zero point, making mechanical interruption of DC faults more challenging and increasing the risk of arcing. Solid-state circuit breakers are designed to interrupt faults within a few microseconds without relying on mechanical contacts.
The companies said the technology could enable faster fault isolation and greater selectivity while supporting more compact and higher-density DC distribution systems. Infineon’s CoolSiC JFET devices are expected to provide the switching technology required for the protection system.
The latest collaboration builds on the companies’ existing work on SolarEdge’s solid-state transformer (SST) platform using Infineon’s SiC components, announced in November 2025.
The SST platform is designed to convert medium-voltage power of 13.8kV-34.5kV directly to 800V-1,500V DC at efficiencies of more than 99%, potentially reducing the number of power-conversion stages and the physical footprint of data-centre power infrastructure.
SSCB Technology
With the SSCB technology, the companies aim to extend this architecture from the SST through the distribution network and protection layer to the compute rack. “High-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection. Solid-state protection will enable operators to achieve both, delivering ultra-fast and dependable fault isolation without sacrificing conversion performance. Infineon’s silicon carbide technology is what makes it practical at scale,” said Shuki Nir, chief executive officer, SolarEdge.
Andreas Weisl, executive vice president and chief sales officer, Industrial & Infrastructure at Infineon, said rising electrical risks in data-centre infrastructure were increasing demand for faster and more robust power-distribution systems. “By combining our advanced silicon carbide JFET technology with SolarEdge’s expertise in final power distribution, we are addressing these demands to ensure fast, safe and reliable operations in AI data centres,” he said.
SolarEdge said it is developing an 800V DC powertrain for AI factories, covering the power chain from the medium-voltage grid connection through conversion, distribution and protection to the compute rack. The company has more than 15 years of experience in DC-coupled power electronics, while Infineon’s portfolio spans silicon, SiC and gallium nitride (GaN) technologies for power-management applications.
The companies said the DC-native architecture could help reduce power losses, improve energy efficiency and lower the environmental impact and total cost of ownership of AI data-centre infrastructure. SolarEdge Technologies is a smart-energy technology company whose portfolio includes photovoltaic inverters, power optimisers, energy storage, EV charging, batteries and grid services solutions. Infineon Technologies AG is a semiconductor company focused on power systems and IoT applications. The company had around 57,000 employees worldwide as of September 2025 and reported revenue of about €14.7 billion in fiscal 2025.
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